isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3514 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1383 APPLICATIONS ·Adudio frequency power amplifier n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC s c s i . w PARAMETER w w VALUE UNIT 180 V 180 5.0 V Collector Current-Continuous 0.1 A Collector Power Dissipation@ Ta=25℃ 1.5 PC TJ Tstg V W Collector Power Dissipation@TC=25℃ 10 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3514 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 50mA; IB= 5mA 1.5 V ICBO Collector Cutoff Current VCB= 180V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 3.0V; IC=0 1.0 μA hFE-1 DC Current Cain IC= 1mA; VCE= 5V hFE-2 DC Current Cain IC= 10mA; VCE= 5V fT COB CONDITIONS w w Output Capacitance hFE-2 Classifications Q P 100-200 160-320 isc Website：www.iscsemi.cn TYP. 90 n c . i m e s c s i . w Current-Gain—Bandwidth Product MIN 100 320 IC= 20mA; VCE= 10V 200 MHz IE= 0; VCB= 10V; ftest= 1.0MHz 3.2 pF 2