isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1301 DESCRIPTION ·High Power Dissipation ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min) ·Complement to Type 2SC3280 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous -1.2 A PC Collector Power Dissipation @ TC=25℃ 120 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1301 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8.0A; IB= -0.8A -2.5 V VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 μA hFE-1 DC Current Gain IC= -1A; VCE= -5V 55 hFE-2 DC Current Gain IC= -6A; VCE= -5V 35 COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz 480 pF Current-Gain—Bandwidth Product IC=-1A ; VCE= -5V 30 MHz fT CONDITIONS hFE-1 Classifications R O 55-110 80-160 isc Website：www.iscsemi.cn 2 MIN TYP. MAX -160 UNIT V 160