isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1110 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SB849 APPLICATIONS ·Designed for audio frequency power amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w VALUE UNIT 120 V 120 V 5 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse 12 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1110 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 2.0 V VBE(sat) Base -Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 2.0 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 50 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 50 μA hFE-1 DC Current Gain IC= 50mA; VCE= 5V hFE-2 DC Current Gain IC= 1A; VCE= 5V COB Output Capacitance fT CONDITIONS w w hFE-2 Classifications S R 40-80 60-120 Q 40 200 IE= 0; VCB= 10V; ftest= 1.0MHz 190 pF IC= 0.2A; VCE= 5V 15 MHz 100-200 isc Website：www.iscsemi.cn TYP. 20 n c . i m e s c s i . w Current-Gain—Bandwidth Product MIN 2