isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB744 DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -45V(Min) ·Complement to Type 2SD794 APPLICATIONS ·Designed for use in audio frequency amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICP Collector Current-Pulse -5 A Collector Power Dissipation @ TC=25℃ 10 W PC Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 1 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB744 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) MAX UNIT IC= -1.5A; IB= -0.15A -2.0 V Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -2.0 V ICBO Collector Cutoff Current VCB= -45V; IE= 0 -1.0 μA IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -1.0 μA hFE-1 DC Current Gain IC= -20mA; VCE= -5V 30 hFE-2 DC Current Gain IC= -0.5A; VCE= -5V 60 Current-Gain—Bandwidth Product IC= -0.1A; VCE= -5V 45 MHz Output Capacitance IE=0; VCB= -10V, ftest= 1MHz 60 pF fT COB CONDITIONS Q P 60-120 100-200 160-320 isc Website：www.iscsemi.cn TYP. B B hFE-2 Classifications R MIN 2 320