isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1266 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.2V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB941 APPLICATIONS ·Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A Collector Power Dissipation @ TC=25℃ 35 PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 2 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1266 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A 1.2 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V 1.8 V ICES Collector Cutoff Current VCE= 60V; VBE= 0 0.2 mA ICEO Collector Cutoff Current VCE= 30V; IB= 0 0.3 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1A ; VCE= 4V 70 hFE-2 DC Current Gain IC= 3A ; VCE= 4V 10 Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V; f= 10MHz fT CONDITIONS MIN TYP. MAX 60 UNIT V 250 30 MHz Switching times ton Turn-on Time tstg Storage Time tf u IC= 1A ; IB1= -IB2= 0.1A; VCC= 50V Fall Time hFE-1 classifications Q P 70-150 120-250 isc Website：www.iscsemi.cn 2 0.5 μs 2.5 μs 0.4 μs