isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1480 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB1052 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A Collector Power Dissipation @ TC=25℃ 25 PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 2 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1480 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 2.0 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 4V 1.2 V ICES Collector Cutoff Current VCE= 60V; VBE= 0 200 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1 mA hFE-1 DC Current Gain IC= 0.1A; VCE= 4V 35 hFE-2 DC Current Gain IC= 1A; VCE= 4V 40 60 UNIT V B 250 Switching times ton Turn-on Time tstg Storage Time tf IC= 1A; IB1= -IB2= 0.1A Fall Time hFE-1 classifications R Q P 40-90 70-150 120-250 isc Website：www.iscsemi.cn 2 0.2 μs 3.5 μs 0.7 μs