isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB763 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·High Collector Power Dissipation ·Complement to Type 2SD858 APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s i . w VALUE UNIT w w -60 V -60 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg n c . i m e Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB763 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -1.5 V VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -4V -1.6 V ICEO Collector Cutoff Current VCE= -30V; IB= 0 -700 μA ICES Collector Cutoff Current VCE= -60V; VBE= 0 -400 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1 mA hFE-1 DC Current Gain hFE-2 DC Current Gain toff IC= -1A; VCE= -4V 40 IC= -3A; VCE= -4V 20 hFE-1 Classifications 40-90 70-150 120-250 isc Website：www.iscsemi.cn UNIT V 250 0.2 μs 1.4 μs IC= -6A; IB1= -IB2= -0.6A Turn-Off Time P MAX -60 n c . i m e Turn-On Time Q TYP. B s c s i . w R MIN B w w Switching Times ton CONDITIONS 2