Inchange Semiconductor Product Specification 2SD1428 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)1S package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A IE Emitter current -6 A PD Total power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1428 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 VCE(sat) Collector-emitter saturation voltage IC=5A; IB=1A 5.0 V VBE(sat) Base-emitter saturation voltage IC=5A; IB=1A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA hFE DC current gain IC=1A ; VCE=5V fT Transition freuqency IC=0.1A ; VCE=10V;f=1MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz Diode forward voltage IF=6A 2.0 V Fall time IC=5A;IB1=1A 1.0 μs VF tf 2 5 UNIT V 8 3 MHz 165 pF Inchange Semiconductor Product Specification 2SD1428 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.15 mm) 3