ISC 2SD640

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SD640
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V (Min)
·Low Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V (Max.)@ IC= 5A
APPLICATIONS
·High voltage switching applications.
·High power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation
@TC=25℃
100
W
Tj
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SD640
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1A
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
2.0
V
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
hFE
DC Current Gain
IC= 1A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 50V; ftest= 1.0MHz
70
pF
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
3
MHz
1.0
μs
3.0
μs
0.6
μs
fT
CONDITIONS
MIN
TYP.
MAX
400
UNIT
V
B
B
25
140
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
isc Website:www.iscsemi.cn
IB1= -IB2= 0.3A; VCC= 200V