isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3475 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 2A ·High Switching Speed APPLICATIONS ·High speed switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A Base Current-Continuous 1 A Collector Power Dissipation @ TC=25℃ 20 IB B PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 2 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3475 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 100 μA hFE-1 DC Current Gain IC= 1A; VCE= 4V 60 hFE-2 DC Current Gain IC= 4A; VCE= 4V 20 Current-Gain—Bandwidth Product IC= 0.5A; VCE= 4V 20 MHz Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 70 pF fT COB CONDITIONS MIN TYP. MAX 60 UNIT V B B 200 Switching times ton Turn-on Time tstg Storage Time tf IB1= -IB2= 0.2A; RL= 15Ω; VCC= 30V Fall Time hFE-1 classifications O Y 60-120 100-200 isc Website：www.iscsemi.cn 2 0.5 μs 2.5 μs 0.5 μs