isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A Collector Power Dissipation @Ta=25℃ 2 PC W Collector Power Dissipation @TC=25℃ 30 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SB1340 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1340 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; IB= 0 -120 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA ; IE= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA -1.5 V ICBO Collector Cutoff Current VCB= -120V ; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA hFE DC Current Gain IC= -2A ; VCE= -3V COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 70 pF Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -5V; ftest= 10MHz 12 MHz fT isc Website：www.iscsemi.cn CONDITIONS MIN TYP. B 2 2000 MAX UNIT 20000