ISC 2SB1340

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min)
·High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A)
·Complement to Type 2SD1889
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak
-10
A
Collector Power Dissipation
@Ta=25℃
2
PC
W
Collector Power Dissipation
@TC=25℃
30
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
isc Website:www.iscsemi.cn
2SB1340
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
2SB1340
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -5mA ; IB= 0
-120
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -50μA ; IE= 0
-120
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -3A; IB= -6mA
-1.5
V
ICBO
Collector Cutoff Current
VCB= -120V ; IE= 0
-100
μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-3
mA
hFE
DC Current Gain
IC= -2A ; VCE= -3V
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
70
pF
Current-Gain—Bandwidth Product
IE= 0.5A ; VCE= -5V; ftest= 10MHz
12
MHz
fT
isc Website:www.iscsemi.cn
CONDITIONS
MIN
TYP.
B
2
2000
MAX
UNIT
20000