isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD676 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 160V(Min) ·High Power Dissipation: PC= 125W(Max)@TC=25℃ ·Complement to Type 2SB656 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT 160 V 160 V 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 20 A PC Collector Power Dissipation @TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD676 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A 2.5 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 0.1 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain CONDITIONS B C 60-120 100-200 isc Website：www.iscsemi.cn MAX UNIT V 5 V n c . i m e IC= 6A; VCE= 5V TYP. 160 B s c s i . w w w hFE-1 Classifications MIN 60 20 200