isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD371 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) ·High Power Dissipation: PC= 50W(Max)@TC=25℃ ·Complement to Type 2SB531 APPLICATIONS ·Designed for power amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER ww VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w VALUE UNIT 90 V 80 V 5 V IC Collector Current-Continuous 6 A IE Emitter Current-Continuous -6 A PC Collector Power Dissipation @TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD371 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 2.5 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 0.1 mA IEBO Emitter Cutoff Current 0.1 mA hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance fT CONDITIONS hFE-1 Classifications Y 40-80 70-140 120-240 B n c . i m e s c is w. w w O TYP. VEB= 5V; IC= 0 Current-Gain—Bandwidth Product R MIN isc Website：www.iscsemi.cn IC= 1A; VCE= 5V 40 IC= 4A; VCE= 5V 20 IE= 0; VCB= 10V; f= 1MHz IC= 1A; VCE= 5V MAX UNIT 240 100 pF 8 MHz