isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD458 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Power Dissipation: PC= 80W(Max)@TC=25℃ APPLICATIONS ·Designed for high power amplifier and switching applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCER VALUE UNIT s c s i . w 600 V Collector-Emitter Voltage RBE= 50Ω 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V w w IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A IBM Base Current-Peak 3 A PC Collector Power Dissipation @TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ B isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD458 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 3.0 V ICER Collector Cutoff Current VCE= 600V; RBE= 50Ω 1.0 mA hFE DC Current Gain IC= 5A; VCE= 5V CONDITIONS Q R 15-50 6.5-30 w w isc Website：www.iscsemi.cn TYP. B B n c . i m e s c s i . w hFE Classifications MIN 6.5 MAX 50 UNIT