isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB653 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·High Power Dissipation: PC= 60W(Max)@TC=25℃ ·Complement to Type 2SD673 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -12 A IB Base Current-Continuous -2 A PC Collector Power Dissipation @TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ B isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB653 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -3.0 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -1 mA hFE-1 DC Current Gain IC= -1A; VCE= -5V 60 hFE-2 DC Current Gain IC= -5A; VCE= -5V 20 fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 22 MHz tf Fall Time IC= -0.6A; IB1= -0.6A; IB2= 0 0.5 μs hFE Classifications B C 60-120 100-200 isc Website：www.iscsemi.cn CONDITIONS MIN TYP. MAX UNIT -100 V -5 V B 200