isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) ·High DC Current Gain: hFE= 500(Min.)@ IC= 5A APPLICATIONS ·High voltage and high power switching applications. ·Motor driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT 600 V 400 V 5 V IC Collector Current-Continuous 15 A IB Base Current 2 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD683 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD683 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5A; L= 10mH VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 0.2A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 0.2A 2.5 V ICBO Collector Cutoff Current VCB= 600V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 30 mA hFE-1 DC Current Gain hFE-2 DC Current Gain VECF C-E Diode Forward Voltage 3.0 V COB Output Capacitance Switching Times CONDITIONS ton Turn-On Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn TYP IC= 5A; VCE= 5V 500 IC= 15A; VCE= 5V 30 VCC=150V; IB1= -IB2= 0.1A UNIT V IF= 10A VCB= 50V, IE= 0; ftest= 1MHz MAX 400 n c . i m e s c is w. w w MIN 100 pF 0.4 μs 15 μs 3.0 μs