isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.)@ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083 APPLICATIONS ·Designed for driver of solenoid, motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT -120 V -120 V -6 V IC Collector Current-Continuous -25 A ICM Collector Current-Peak -40 A IB Base Current- Continuous -2 A PC Collector Power Dissipation @TC=25℃ 120 W Tj Junction Temperature 150 ℃ -55~150 ℃ B Tstg n c . i m e Storage Temperature Range isc Website：www.iscsemi.cn 2SB1383 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1383 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ,IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -12A ,IB= -24mA -1.8 V VBE(sat) Base-Emitter Saturation Voltage IC= -12A ,IB= -24mA -2.5 V ICBO Collector Cutoff current VCB= -120V, IE= 0 -10 μA IEBO Emitter Cutoff current VEB= -6V, IC= 0 -10 mA hFE DC Current Gain COB Output Capacitance fT Turn-On Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn MIN TYP. MAX -120 n c . i m e s c is . w w w ton B IC= -12A ; VCE= -4V Current-Gain—Bandwidth Product Switching Times CONDITIONS UNIT V 2000 IE= 0; VCB= -10V; ftest= 1MHz 230 pF IE= 1A ; VCE= -12V 50 MHz 1.0 μs 3.0 μs 1.0 μs IC = -12A,IB1 = -IB2= -24mA; VCC= -24V, RL= 2Ω