isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 300V(Min) ·High DC Current Gain: hFE= 1500(Min.)@IC= 2A ·Low Collector-Emitter Saturation Voltage: VCE(sat)= 2.0V(Max) @IC= 4A APPLICATIONS ·Igniter applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD684 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD684 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX 300 UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 40mH V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.5 V ICBO Collector Cutoff Current VCB= 600V; IE= 0 500 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 500 μA hFE-1 DC Current Gain IC= 2A; VCE= 2V 1500 hFE-2 DC Current Gain IC= 4A; VCE= 2V 200 COB Collector Output Capacitance VCB= 50V, IE= 0; ftest= 1MHz B B 35 pF 1.0 μs 8.0 μs 5.0 μs Switching Times ton Turn-On Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 4A; IB1= -IB2= 40mA; RL= 25Ω,VCC =100V 2