Inchange Semiconductor Product Specification 2SD762 2SD762A Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Wide area of safe operation APPLICATIONS ·For audio freuqency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS 2SD762 VCBO Collector-base voltage 60 Open base 2SD762A VEBO Emitter-base voltage V 80 2SD762 Collector-emitter voltage UNIT 60 Open emitter 2SD762A VCEO VALUE V 80 Open collector 8 V IC Collector current 4 A ICM Collector current-peak 6 A IB Base current 1 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SD762 2SD762A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD762 VCEO(SUS) Collector-emitter sustaining voltage TYP. MAX UNIT 60 IC=0.2A; L=25mH V 80 2SD762A VCEsat MIN Collector-emitter saturation voltage IC=2 A;IB=0.4 A 1.0 V VBE Base-emitter on voltage IC=1A ; VCE=3V 1.2 V ICBO Collector cut-off current VCB=50V; IE=0 30 μA IEBO Emitter cut-off current VEB=8V; IC=0 1 mA hFE-1 DC current gain IC=0.1A ; VCE=3V 40 hFE-2 DC current gain IC=1A ; VCE=3V 30 B hFE-2 classifications Q P O 30-60 50-100 80-160 2 160 Inchange Semiconductor Product Specification 2SD762 2SD762A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3