ISC 2SB900

Inchange Semiconductor
Product Specification
2SB900
Silicon PNP Power Transistors
·
DESCRIPTION
·With TO-220C package
·Low collector saturation voltage
·Wide area of safe operation
APPLICATIONS
·For power amplifier and switching
applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-50
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-4
A
PC
Collector dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-50~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB900
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA; IB=0
-50
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA; IE=0
-50
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA; IC=0
-5
V
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.0
V
VBE
Base-emitter on voltage
IC=-2A ; VCE=-4V
-1.4
V
ICBO
Collector cut-off current
VCB=-50V; IE=0
-0.1
mA
ICEO
Collector cut-off current
VCE=-50V; IE=0
-1.0
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE
DC current gain
IC=-1A ; VCE=-4V
VCEsat
CONDITIONS
2
MIN
40
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
2SB900
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3