Inchange Semiconductor Product Specification 2SB900 Silicon PNP Power Transistors · DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -4 A PC Collector dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB900 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -50 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBE Base-emitter on voltage IC=-2A ; VCE=-4V -1.4 V ICBO Collector cut-off current VCB=-50V; IE=0 -0.1 mA ICEO Collector cut-off current VCE=-50V; IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-1A ; VCE=-4V VCEsat CONDITIONS 2 MIN 40 TYP. MAX UNIT Inchange Semiconductor Product Specification 2SB900 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3