Inchange Semiconductor Product Specification 2SD2029 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SB1347 ・Wide area of safe operation ・High transition frequency APPLICATIONS ・Optimum for the output stage of a Hi-Fi audio amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 160 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A ICM Collector current-peak 20 A PC Collector power dissipation Ta=25℃ 3.5 W TC=25℃ 120 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD2029 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A 2.0 V VBE Base-emitter voltage IC=8A ; VCE=5V 1.8 V ICBO Collector cut-off current VCB=160V; IE=0 50 μA IEBO Emitter cut-off current VEB=3V; IC=0 50 μA hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE-2 DC current gain IC=1A ; VCE=5V 60 hFE-3 DC current gain IC=8A ; VCE=5V 20 Transition frequency IC=0.5A ; VCE=5V;f=1MHz 20 MHz Collector output capacitance IE=0;f=1MHz;VCB=10V 210 pF fT COB CONDITIONS hFE-2 classifications Q S P 60-120 80-160 100-200 2 MIN TYP. MAX 160 UNIT V 200 Inchange Semiconductor Product Specification 2SD2029 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50mm) 3 Inchange Semiconductor Product Specification 2SD2029 Silicon NPN Power Transistors 4