Inchange Semiconductor Product Specification 2SB1158 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1713 ・High fT ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL OND VALUE UNIT -120 V -120 V -5 V Collector current -6 A ICP Collector current-peak -10 A PC Collector power dissipation VCBO VCEO VEBO IC PARAMETER R O T UC Collector-base voltage IC M E ES G N A INCH Collector-emitter voltage Emitter-base voltage CONDITIONS Open emitter Open base Open collector TC=25℃ 70 Ta=25℃ 3 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1158 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER MAX UNIT VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -2.0 V VBE Base-emitter on voltage IC=-4A ; VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE -2 DC current gain IC=-1A ; VCE=-5V 60 hFE -3 DC current gain IC=-4A ; VCE=-5V 20 COB Output capacitance fT CONDITIONS 导体 半 电 固 Transition frequency Q 60-120 IC=-0.5A ; VCE=-5V P 80-160 100-200 180 R O T UC D N O IC N A H INC S 2 TYP. 200 IE=0 ; VCB=-10V;f=1MHz M E S GE hFE-2 classifications MIN 20 pF MHz Inchange Semiconductor Product Specification 2SB1158 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3