isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD860 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 250V(Min) ·High Collector Power Dissipation APPLICATIONS ·Designed for AF power amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER w w w VALUE UNIT 350 V 250 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 2 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD860 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.0 V VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 10V 1.5 V ICEO Collector Cutoff Current VCE= 150V; IB= 0 1 mA ICES Collector Cutoff Current VCE= 350V; VBE= 0 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1 mA hFE-1 DC Current Gain hFE-2 DC Current Gain toff 40 IC= 2A; VCE= 10V 10 40-90 70-150 120-250 isc Website：www.iscsemi.cn UNIT V 250 0.2 μs 2.0 μs IC= 2A; IB1= -IB2= 0.2A hFE-1 Classifications P MAX 250 IC= 0.3A; VCE= 10V Turn-Off Time Q TYP. n c . i m e Turn-On Time R MIN B s c s i . w w w Switching Times ton CONDITIONS 2