isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 5A, VCE= 3V ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min) ·Complement to Type 2SB1032 APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A PC Collector Power Dissipation @TC=25℃ 80 W Tj Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD1436 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1436 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA ,IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A, IB= 10mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A, IB= 0.1A 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A, IB= 10mA 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A, IB= 0.1A 3.5 V ICBO Collector Cutoff current VCB= 120V, IE= 0 0.1 mA ICEO Collector Cutoff current VCE= 100V, RBE= ∞ 10 μA hFE DC Current Gain IC= 5A; VCE= 3V 120 V 7 V B B 1000 20000 Switching Times ton Turn-On Time 0.8 μs 4.0 μs IC = 5A, IB1 = -IB2= 10mA toff Turn-Off Time isc Website：www.iscsemi.cn