isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION ·Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B/C APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCER VCEO VEBO PARAMETER Collector-Emitter Voltage (RBE= 100Ω) Collector-Emitter Voltage VALUE BD245 55 BD245A 70 BD245B 90 BD245C 115 BD245 45 BD245A 60 BD245B 80 BD245C 100 UNIT V V Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current 3 A PC Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ B TJ Tstg Junction Temperature Storage Temperature Range 3 W 80 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.56 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD245/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD245 V(BR)CEO Collector-Emitter Breakdown Voltage MIN TYP. MAX UNIT 45 BD245A 60 IC= 30mA ;IB=0 V B BD245B 80 BD245C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A 4.0 V VBE(on)-1 Base-Emitter On Voltage IC= 3A ; VCE= 4V 1.6 V VBE(on)-2 Base-Emitter On Voltage IC= 10A ; VCE= 4V 3.0 V 0.4 mA 0.7 mA 1.0 mA ICES ICEO Collector Cutoff Current Collector Cutoff Current B BD245 VCE= 55V; VBE= 0 BD245A VCE= 70V; VBE= 0 BD245B VCE= 90V; VBE= 0 BD245C VCE= 115V; VBE= 0 BD245/A VCE= 30V;IB= 0 BD245B/C VCE= 60V;IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 1A ; VCE= 4V 40 hFE-2 DC Current Gain IC= 3A ; VCE= 4V 20 hFE-3 DC Current Gain IC= 10A ; VCE= 4V 4 Current-Gain—Bandwidth Product IC= 0.5A ;VCE= 10V,ftest= 1.0MHz fT 3.0 MHz Switching times ton Turn-on Time toff Turn-off Time isc Website：www.iscsemi.cn IC= 1A; IB1= -IB2= 0.1A; RL=20Ω; VBE(OFF)= -3.7V 2 0.2 μs 0.8 μs INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Website：www.iscsemi.cn isc Product Specification BD245/A/B/C