ISC 2SB1097

Inchange Semiconductor
Product Specification
2SB1097
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Low collector saturation voltage
・Complement to type 2SD1588
APPLICATIONS
・For low frequency power amplifier and
low speed switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector -emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
-7
A
IC
Collector current
PC
Collector power dissipation
Ta=25℃
2.0
W
TC=25℃
30
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1097
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-30mA; IB=0
-60
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA; IE=0
-80
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA; IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-5A ;IB=-0.5A
-1.5
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE
DC current gain
IC=-3A ; VCE=-1V
‹
CONDITIONS
hFE Classifications
M
L
K
40-80
60-120
100-200
2
MIN
40
TYP.
MAX
200
UNIT
Inchange Semiconductor
Product Specification
2SB1097
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3