isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD315 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 8A ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.0 V(Max)@ IC = 8A ·Complement to Type BD316 APPLICATIONS ·Designed for high quality amplifiers operating up to 100 watts into 4 ohm load. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT 80 V 80 V 7 V s c s i . w w w IC Collector Current-Continuous 16 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX UNIT 0.875 ℃/W isc Website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD315 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=200mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 0.8A 1.8 V VBE(on) Base-Emitter On Voltage IC= 8A; VCE= 2V 1.5 V ICBO Collector Cutoff Current VCB= 80V; IB=0 1.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 1.0 mA hFE-1 DC Current Gain hFE-2 DC Current Gain fT CONDITIONS MIN B 80 B B B s c s i . w n c . i m e w w Current Gain-Bandwidth Product IC= 8A; VCE= 4V 25 IC= 10A; VCE= 4V 15 IC= 1A; VCE= 20V 1 isc Website：www.iscsemi.cn 2 MAX UNIT V MHz