isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY39 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain: hFE=25-100@IC = 4A ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.7V(Max)@ IC = 4A APPLICATIONS ·Designed for use in high power AF output stages and in stabilized power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 22.5 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 115 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER MAX UNIT 1.5 ℃/W Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY39 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC=200mA; IB=0 60 V VCEV(SUS) Collector-Emitter Sustaining Voltage IC=100mA; VBE= -1.5V 100 V VCER(SUS) Collector-Emitter Sustaining Voltage IC=200mA; RBE=100Ω 70 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 0.7 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V 1.1 V ICEO Collector Cutoff Current VCE= 30V; IB=0 0.7 mA ICEV Collector Cutoff Current VCE= 100V; VBE= -1.5V VCE= 60V; VBE= -1.5V, TC=150℃ 1.0 5.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE DC Current Gain IC= 4A; VCE= 4V 25 Current Gain-Bandwidth Product IC= 0.3A; VCE= 2V 0.8 fT CONDITIONS B MIN B B isc Website：www.iscsemi.cn 2 MAX UNIT 100 MHz