isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ15026 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain: hFE= 25(Min.)@IC = 5A ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A ·Complement to Type MJ15027 APPLICATIONS ·Designed for high power audio, disk head positioners , and other linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 200 V VCBO Collector-Base Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A ICM Collector Current-Peak 32 A IB Base Current-Continuous 7 A PD Total Power Dissipation@TC=25℃ 250 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ15026 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 4A 3.0 V Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.0 V ICEO Collector Cutoff Current VCE= 120V; IB= 0 1.0 mA ICEX Collector Cutoff Current VCE= 200V;VBE(off)= 1.5V 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 5A ; VCE= 5V 25 hFE-2 DC Current Gain IC= 16A ; VCE= 5V 6 Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V; ftest= 1.0MHz 15 Output Capacitance IE= 0 ; VCB= 10V; ftest= 1.0MHz VBE(sat) fT COB isc Website：www.iscsemi.cn CONDITIONS MIN MAX 200 UNIT V 150 MHz 750 pF