isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ802 DESCRIPTION ·High DC Current Gain: hFE= 25-100@IC= 7.5A ·Excellent Safe Operating Area ·Complement to Type MJ4502 APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 30 A IB Base Current-Continuous 7.5 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 150 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ802 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=0.2A ;IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC=7.5A; IB=0.75A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC=7.5A; IB=0.75A 1.3 V VBE(on) Base-Emitter On Voltage IC=7.5A ; VCE=2V 1.3 V ICBO Collector Cutoff Current VCB=100V; IE=0 VCB=100V; IE=0;TC=150℃ 1.0 5.0 mA IEBO Emitter Cutoff current VEB=4V; IC=0 1.0 mA hFE DC Current Gain IC=7.5A ; VCE=2V 25 Current-Gain—Bandwidth Product IC=1A;VCE=10V;f=1.0MHz 2.0 fT isc Website：www.iscsemi.cn CONDITIONS MIN TYP MAX 90 UNIT V 100 MHz INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Website：www.iscsemi.cn isc Product Specification MJ802