isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C ·Complement to Type BDT60/A/B/C APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage VALUE BDT61 60 BDT61A 80 n c . i m e V s c s i . w BDT61B 100 BDT61C 120 w w Collector-Emitter Voltage UNIT BDT61 60 BDT61A 80 BDT61B 100 BDT61C 120 V Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current 0.1 A PC Collector Power Dissipation Ta=25℃ Collector Power Dissipation TC=25℃ B Tj Tstg Junction Temperature Storage Ttemperature Range 2 W 50 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistors BDT61/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT61 V(BR)CEO Collector-Emitter Breakdown Voltage MIN TYP. MAX UNIT 60 BDT61A 80 IC= 30mA; IB= 0 V BDT61B 100 BDT61C 120 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 6mA 2.5 V VBE(on) Base-Emitter On Voltage IC= 1.5A ; VCE= 3V 2.5 V BDT61 VCB= 60V; IE= 0 VCB= 30V; IE= 0; TJ=150℃ 0.2 2.0 BDT61A VCB= 80V; IE= 0 VCB= 40V; IE= 0; TJ=150℃ 0.2 2.0 VCB= 100V; IE= 0 VCB= 50V; IE= 0; TJ=150℃ 0.2 2.0 VCB= 120V; IE= 0 VCB= 60V; IE= 0; TJ=150℃ 0.2 2.0 VCE= 30V; IB= 0 0.5 VCE= 40V; IB= 0 0.5 BDT61B VCE= 50V; IB= 0 0.5 BDT61C VCE= 60V; IB= 0 0.5 5 mA 2.0 V ICBO Collector Cutoff Current ww BDT61C ICEO w Collector Cutoff Current BDT61 BDT61A n c . i m e s c s .i BDT61B B B mA B B IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1.5A; VCE= 3V C-E Diode Forward Voltage IE= 1.5A VECF mA 750 Switching Times ton Turn-On Time toff Turn-Off Time isc Website：www.iscsemi.cn IC= 2A; IB1= -IB2= 8mA; VBE(off)= -5V; RL= 20Ω 1.0 μs 4.5 μs