isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -16A ·Collector-Emitter Saturation Voltage: VCE(sat)= -2.0V(Max.)@ IC= -10A ·Complement to Type BDV67/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE BDV66 -80 BDV66A -100 BDV66B -120 BDV66C -140 BDV66 -60 BDV66A -80 BDV66B -100 BDV66C -120 UNIT V V Emitter-Base Voltage -5 V IC Collector Current-Continuous -16 A ICM Collector Current-Peak -20 A IB Base Current-Continuous -0.5 A PC Collector Power Dissipation @ TC=25℃ 175 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.625 ℃/W isc Website：www.iscsemi.cn BDV66/A/B/C isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDV66/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS MIN BDV66 -60 BDV66A -80 TYP. MAX IC= -100mA ;IB=0 UNIT V BDV66B -100 BDV66C -120 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA -2 V VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -3V -2.5 V ICEO Collector Cutoff Current VCE= 1/2VCEOmax; IB= 0 -1 mA -5 mA ICBO BDV66 VCB= -40V;IE= 0;TJ= 150℃ BDV66A VCB= -50V;IE= 0;TJ= 150℃ BDV66B VCB= -60V;IE= 0;TJ= 150℃ BDV66C VCB= -70V;IE= 0;TJ= 150℃ Collector Cutoff Current ICBO Collector Cutoff Current VCB= VCBOmax;IE= 0 -1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 mA hFE DC Current Gain IC= -10A ; VCE= -3V COB Output Capacitance IE= 0 ; VCB= -10V; ftest= 1MHz 1000 300 pF 1 μs 3.5 μs Switching times ton Turn-on Time toff Turn-off Time isc Website：www.iscsemi.cn IC= -10A; IB1= -IB2= -40mA; VCC= 12V 2