isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA671 DESCRIPTION ·Low Collector Saturation Voltage: VCE(SUS)= -1.0V(Max)@ IC= -2.0A ·DC Current Gain : hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 APPLICATIONS ·Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -6 A IB Base Current-Continuous -0.5 A PC Total Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA671 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA ; IC= 0 -7 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -1.0 V VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -4V -1.5 V ICBO Collector Cutoff Current VCB= -25V ; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -100 μA hFE-1 DC Current Gain IC= -0.1A ; VCE= -4V 35 hFE-2 DC Current Gain IC= -1A ; VCE= -4V 35 Current-Gain—Bandwidth Product IC= -0.5A;VCE= -4V; ftest= 1MHz 5 fT CONDITIONS B hFE-1 Classifications A B C D 35-70 60-120 100-200 160-320 isc Website：www.iscsemi.cn MIN 2 TYP. MAX UNIT 320 MHz