isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU105 DESCRIPTION ·High Voltage-VCER= 1500V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= 5.0V(Max.)@ IC= 2.5A APPLICATIONS ·Designed for use in line operated B&W(19 and 20 inch 110℃ deflection circuits ) or color ( 11 and 14 inch 90℃ deflection circuits TV receivers. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER VCBO Collector-Base Voltage VCER Collector-Emitter Voltage RBE= 100Ω VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w w VALUE UNIT 1500 V 1500 V 750 V 5 V IC Collector Current-Continuous 2.5 A PC Collector Power Dissipation @TC= 90℃ 10 W TJ Junction Temperature 115 ℃ Tstg Storage Temperature -65~115 ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 2.5 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU105 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 750 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 100mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 1.5A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 1.5A 1.5 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 1.0 mA COB Output Capacitance IE= 0; VCB= 10V; ftest= 0.1MHz n c . i m e Current-Gain—Bandwidth Product tf Fall Time w w isc Website：www.iscsemi.cn TYP. MAX UNIT 65 pF IC= 0.1A; VCE= 5V 7.5 MHz IC= 2A; IB1= 1.5A; LB= 12μH 0.5 μs s c s i . w fT MIN 2