isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ12003 DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 750V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1500 V VCEO(SUS) Collector-Emitter Voltage 750 V Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 3 A IE Emitter Current-Continuous 7 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ VEBO B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ12003 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1.2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1.2A 1.5 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 mA hFE DC Current Gain IC= 0.5A ; VCE= 5V Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V; ftest=1.0MHz 4 MHz Output Capacitance IE= 0; VCB= 10V; ftest=0.1MHz 90 pF Fall Time IC= 3A , IB1= 1.2A; LB= 8μH 0.5 fT COB tf isc Website：www.iscsemi.cn CONDITIONS B MIN TYP. 750 UNIT V B B 2 MAX 6 1.0 μs