isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2527DX DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current-Continuous 12 A ICM Collector Current-peak 30 A IB Base Current-Continuous 8 A IBM Base Current-peak 12 A PC Collector Power Dissipation @TC=25℃ 45 W Tj Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.8 K/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2527DX ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A 1.1 V ICES Collector Cutoff Current VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0;TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 110 hFE-1 DC Current Gain IC= 1A; VCE= 5V 11 hFE-2 DC Current Gain IC= 8A; VCE= 5V VECF C-E Diode Forward Voltage IF= 8A COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1MHz B B 5 7 MAX UNIT mA 10 2.0 145 V pF Switching times tstg Storage Time 2.0 μs 0.2 μs IC= 6A , IB(end)= 0.55A; LB= 0.6μH -VBB= 4V; -IBM= 3.6A tf Fall Time isc Website：www.iscsemi.cn