Inchange Semiconductor Product Specification BU508DF Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・High voltage,high speed ・With integrated efficiency diode APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 8 A ICP Collector current (Pulse) 15 A IB Base current (DC) 4 A IBM Base current (Pulse) 6 A Ptot Total power dissipation 34 W 150 ℃ -65~150 ℃ Tj Tstg Max.operating junction temperature Storage temperature TC=25℃ Inchange Semiconductor Product Specification BU508DF Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH VCE(sat) Collector-emitter saturation voltage IC=4.5A; IB=1.6A 1.0 V VBE(sat) Base-emitter saturation voltage IC=4.5A ;IB=2A 1.1 V IEBO Emitter cut-off current VEB=5V; IC=0 300 mA ICES Collector cut-off current VCB=BVCBO IE=0 TC=125℃ 1.0 2.0 mA hFE DC current gain IC=0.5A ; VCE=5V fT Transition frequency IC=0.1A ; VCE=5V COB Output capacitance Diode forward voltage VF 700 UNIT V 10 30 7 MHz IE=0 ; VCB=10V;f=1MHz 125 pF IF=4.5A 1.6 2 2.0 V Inchange Semiconductor Product Specification BU508DF Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3