ISC BU505DF

Inchange Semiconductor
Product Specification
BU505DF
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220Fa package
・High voltage,high speed
・With integrated efficiency diode
APPLICATIONS
・For horizontal deflection circuits of color
TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
5
V
2.5
A
IC
Collector current
ICM
Collector current (peak)
4
A
IB
Base current
2
A
IBM
Base current(peak)
4
A
Ptot
Total power dissipation
20
W
150
℃
-65~150
℃
MAX
UNIT
55
K/W
Tj
Tstg
TC=25℃
Max.operating junction temperature
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
Thermal resistance from junction to ambient
Inchange Semiconductor
Product Specification
BU505DF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1 A ;IB=0;L=25mH
700
V(BR)EBO
Emitter-base breakdown voltage
IE=600mA ;IC=0
7.5
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.9 A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.9 A
1.3
V
ICES
Collector cut-off current
VCE =1500V;VBE=0;
TC=125℃
0.15
1.0
mA
hFE-1
DC current gain
IC=0.1A ;VCE=5V
hFE-2
DC current gain
IC=2A ;VCE=5V
VF
Diode forward voltage
IF=2A
fT
Transition frequency
IC=0.1A ;VCE=5V
7
MHz
CC
Collector output capacitance
IE=0;f=1MHz;VCB=10V
65
pF
V
13.5
6
V
30
2.22
1.8
2
UNIT
V
Inchange Semiconductor
Product Specification
BU505DF
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3