Inchange Semiconductor Product Specification BU508AX Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V IC Collector current (DC) 8 A ICM Collector current (Pulse) 15 A IB Base current (DC) 4 A IBM Base current (Pulse) 6 A Ptot Total power dissipation 45 W TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BU508AX Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=1.6A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2A 1.1 V ICES Collector cut-off current VCE=RatedVCE; VBE=0 TC=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=6.0V; IC=0 10 mA hFE DC current gain IC=100mA ; VCE=5V fT Transition frequency IE=0.1A ; VCE=5V Cob Output capacitance VCB=10V;IE=0;f=1.0MHz 2 MIN TYP. MAX 700 6 UNIT V 13 30 7 MHz 125 pF Inchange Semiconductor Product Specification BU508AX Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3