Inchange Semiconductor Product Specification BU506DF Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・High voltage ・High-speed switching ・With integrated efficiency diode APPLICATIONS ・Horizontal deflection circuits of colour TV receivers. ・Line-operated switch-mode applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 5 A ICM Collector current (Pulse) 8 A IB Base current 3 A IBM Base current(peak) 5 A PT Total power dissipation 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65-150 ℃ TC=25℃ Inchange Semiconductor Product Specification BU506DF Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0,L=25mH VCEsat Collector-emitter saturation voltage IC=3A; IB=1.33A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=1.33A 1.3 V hFE-1 DC current gain IC=0.1A ; VCE=5V hFE-2 DC current gain IC=3A ; VCE=5V ICES Collector cut-off current VCE=rated; VBE=0 Tj=125℃ 0.5 1.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 200 mA VF Diode forward voltage IF=3A; 2.2 V 700 6 UNIT V 13 30 2.25 1.5 Switching times ts tf Storage time Fall time ICM = 3 A; IB(end) = 1A LB = 12μH 2 6.5 μs 0.7 μs Inchange Semiconductor Product Specification BU506DF Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3