Inchange Semiconductor Product Specification BU508DW Silicon NPN Power Transistors DESCRIPTION ・With TO-247 package ・High voltage,high speed ・With integrated efficiency diode APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V IC Collector current (DC) 8 A ICP Collector current (Pulse) 15 A IB Base current (DC) 4 A IBM Base current (Pulse) 6 A Ptot Total power dissipation 125 W TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BU508DW Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) TYP. Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 700 VCE(sat) Collector-emitter saturation voltage IC=4.5A ;IB=1.6A 1.0 V VBE(sat) Base-emitter saturation voltage IC=4.5A ;IB=2A 1.1 V ICES Collector cut-off current VCE=1500V, VBE=0 Tj=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=5.0V; IC=0 300 mA hFE DC current gain IC=500mA ; VCE=5V VF Diode forward voltage IF=4.5A UNIT fT Transition frequency IE=0.1A ; VCE=5V CC Collector capacitance VCB=10V;IE=0;f=1.0MHz V 10 30 1.6 2 MAX 2.0 V 7 MHz 125 pF Inchange Semiconductor Product Specification BU508DW Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3