ISC 2SC2517

Inchange Semiconductor
Product Specification
2SC2517
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・Low collector saturation voltage
・Wide area of safe operation
APPLICATIONS
・Switching regulators
・DC-DC converters
・High frequency power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
12
V
IC
Collector current
5
A
ICM
Collector current-peak
10
A
IB
Base current
2.5
A
PT
Total power dissipation
Ta=25℃
1.5
W
TC=25℃
30
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC2517
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
100
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=3.0A ; IB=0;L=1mH
V
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.3A
0.6
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=100V ;IE=0
10
μA
ICEX
Collector cut-off current
VCE=100V; VBE=-1.5V
Ta=125℃
10
1
μA
mA
IEBO
Emitter cut-off current
VEB=10V ;IC=0
10
μA
hFE-1
DC current gain
IC=0.2 A ; VCE=5V
40
hFE-2
DC current gain
IC=2 A ; VCE=5V
40
200
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A; IB1=-IB2=0.3A
RL=17Ω; VCC=50V
hFE-2 Classifications
M
L
K
40-80
60-120
100-200
2
0.5
μs
2.5
μs
0.5
μs
Inchange Semiconductor
Product Specification
2SC2517
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3