Inchange Semiconductor Product Specification 2SC2517 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Low collector saturation voltage ・Wide area of safe operation APPLICATIONS ・Switching regulators ・DC-DC converters ・High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 12 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2.5 A PT Total power dissipation Ta=25℃ 1.5 W TC=25℃ 30 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC2517 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX 100 UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=3.0A ; IB=0;L=1mH V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 0.6 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=100V ;IE=0 10 μA ICEX Collector cut-off current VCE=100V; VBE=-1.5V Ta=125℃ 10 1 μA mA IEBO Emitter cut-off current VEB=10V ;IC=0 10 μA hFE-1 DC current gain IC=0.2 A ; VCE=5V 40 hFE-2 DC current gain IC=2 A ; VCE=5V 40 200 Switching times ton Turn-on time ts Storage time tf Fall time IC=3A; IB1=-IB2=0.3A RL=17Ω; VCC=50V hFE-2 Classifications M L K 40-80 60-120 100-200 2 0.5 μs 2.5 μs 0.5 μs Inchange Semiconductor Product Specification 2SC2517 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3