SAVANTIC 2SC2331

SavantIC Semiconductor
Product Specification
2SC2331
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1008
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·Switching regulators
·DC-DC converters
·High frequency power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
2.0
A
ICM
Collector current-Peak
4.0
A
IB
Base current
1.0
A
PT
Total power dissipation
Ta=25
1.5
TC=25
15
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC2331
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
100
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=1.0A ,IB=0.1A,L=1mH
V
VCEsat
Collector-emitter saturation voltage
IC=1A; IB=0.1A
0.6
V
VBEsat
Base-emitter saturation voltage
IC=1A ;IB=0.1A
1.5
V
ICBO
Collector cut-off current
VCB=100V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
40
hFE-2
DC current gain
IC=1A ; VCE=5V
40
200
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1.0A IB1=- IB2=0.1A
RL=50A;VCCB50V
hFE-2 Classifications
M
L
K
40-80
60-120
100-200
2
0.5
µs
1.5
µs
0.5
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SC2331