Preliminary Technical Information IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Depletion Mode MOSFET VDSX ID(on) RDS(on) N-Channel = > ≤ 500V 1.6A 2.3Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 100 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 0.35 2.50 3.00 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 250μA 500 VGS(off) VDS = 25V, ID = 100μA - 2.0 IGSX VGS = ±20V, VDS = 0V IDSX(off) VDS = VDSX, VGS= - 5V RDS(on) VGS = 0V, ID = 0.8A, Note 1 ID(on) VGS = 0V, VDS = 25V, Note 1 - 4.0 • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification V Advantages V • Easy to Mount • Space Savings • High Power Density ±100 nA 2 μA 25 μA TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 2.3 1.6 Ω A Applications • • • • • • Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads DS100179A(12/09) IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 1.00 VDS = 30V, ID = 0.8A, Note 1 Ciss 1.75 S 645 pF VGS = -10V, VDS = 25V, f = 1MHz Coss Crss td(on) 65 pF 16.5 pF 25 ns 70 ns 35 ns 41 ns 23.7 nC 2.2 nC 13.8 0.50 Resistive Switching Times tr VGS = ±5V, VDS = 250V, ID = 0.8A td(off) RG = 5Ω (External) tf Qg(on) Qgs VGS = 5V, VDS = 250V, ID = 0.8A Qgd RthJC RthCS TO-220 TO-252 AA (IXTY) Outline Millimeter Min. Max. Inches Min. Max. nC A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 1.25 °C/W °C/W A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 Characteristic Values Min. Typ. Max. Test Conditions SOA VDS = 400V, ID = 0.15A, TC = 75°C, Tp = 5s 60 W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VSD IF = 1.6A, VGS = -10V, Note 1 trr IRM QRM IF = 1.6A, -di/dt = 100A/μs VR = 100V, VGS = -10V Characteristic Values Min. Typ. Max. 0.8 Gate Drain Source Drain Bottom Side Dim. Safe-Operating-Area Specification Symbol 1. 2. 3. 4. 1.3 400 9.16 1.83 V e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC TO-220 (IXTP) Outline ns A μC Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-263 (IXTA) Outline 1. 2. 3. 4. Gate Drain Source Drain Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 6.22 2.54 14.61 2.29 1.02 1.27 8.13 BSC 15.88 2.79 1.40 1.78 .270 .100 .575 .090 .040 .050 .320 BSC .625 .110 .055 .070 Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 10 1.6 VGS = 5V 3V 2V 1V 1.4 1.2 VGS = 5V 3V 9 8 2V ID - Amperes ID - Amperes 7 1.0 0V 0.8 -1V 0.6 6 1V 5 4 0V 3 0.4 -1V 2 -2V 0.2 1 0.0 -2V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 20 25 30 Fig. 4. Drain Current @ T J = 25ºC Fig. 3. Output Characteristics @ T J = 125ºC 1.6 1E+00 VGS = 5V 2V 1V 1.4 VGS = - 2.25V - 2.50V 1E-01 - 2.75V 0V 1.2 - 3.00V 1E-02 -1V 1.0 ID - Amperes ID - Amperes 15 VDS - Volts VDS - Volts 0.8 0.6 - 3.25V 1E-03 - 3.50V 1E-04 - 3.75V 1E-05 - 4.00V -2V 0.4 0.2 -3V 0.0 1E-06 0 1 2 3 4 5 6 0 100 200 VDS - Volts 300 400 500 600 VDS - Volts Fig. 5. Drain Current @ T J = 100ºC Fig. 6. Dynamic Resistance vs. Gate Voltage 1.E+08 1.E+00 VGS = -2.50V ∆VDS = 350V - 100V 1.E+07 -2.75V 1.E-01 R O - Ohms ID - Amperes -3.00V -3.25V 1.E-02 -3.50V 1.E+06 TJ = 25ºC 1.E+05 TJ = 100ºC -3.75V 1.E-03 1.E+04 -4.00V 1.E-04 1.E+03 0 100 200 300 400 VDS - Volts © 2009 IXYS CORPORATION, All Rights Reserved 500 600 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 VGS - Volts -2.8 -2.6 -2.4 -2.2 IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Fig. 8. RDS(on) Normalized to ID = 0.8A Value vs. Drain Current Fig. 7. Normalized RDS(on) vs. Junction Temperature 2.6 3.5 VGS = 0V VGS = 0V I D = 0.8A 3.0 R DS(on) - Normalized R DS(on) - Normalized 2.2 1.8 1.4 1.0 5V - - - - 2.5 TJ = 125ºC 2.0 1.5 TJ = 25ºC 0.6 1.0 0.2 0.5 -50 -25 0 25 50 75 100 125 0 150 1 2 TJ - Degrees Centigrade 4 5 6 5 6 Fig. 10. Transconductance Fig. 9. Input Admittance 6 3.5 VDS= 30V VDS= 30V 3.0 5 2.5 g f s - Siemens 4 ID - Amperes 3 ID - Amperes 3 TJ = 125ºC 25ºC - 40ºC 2 TJ = - 40ºC 25ºC 125ºC 2.0 1.5 1.0 1 0.5 0 -3.5 0.0 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 0 1 2 VGS - Volts 3 4 ID - Amperes Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature Fig. 12. Forward Voltage Drop of Intrinsic Diode 1.3 5 4 1.2 VGS(off) @ VDS = 25V IS - Amperes BV / VGS(off) - Normalized VGS= -10V 1.1 BVDSX @ VGS = - 5V 1.0 3 2 TJ = 125ºC TJ = 25ºC 1 0.9 0 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.3 0.4 0.5 0.6 VSD - Volts 0.7 0.8 0.9 IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Fig. 13. Capacitance Fig. 14. Gate Charge 5 10,000 VDS = 250V 4 f = 1 MHz I D = 0.8A Capacitance - PicoFarads 3 2 Ciss VGS - Volts 1,000 100 I G = 10mA Coss 1 0 -1 -2 -3 Crss -4 -5 10 0 5 10 15 20 25 30 35 0 40 5 10 15 20 25 VDS - Volts QG - NanoCoulombs Fig. 15. Forward-Bias Safe Operating Area Fig. 16. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 10.0 10.0 RDS(on) Limit RDS(on) Limit 25µs 100µs ID - Amperes ID - Amperes 100µs 1ms 1.0 1.0 1ms 10ms TJ = 150ºC TJ = 150ºC 100ms TC = 25ºC Single Pulse 10ms TC = 75ºC Single Pulse DC DC Fig. 17. Maximum Transient Thermal Impedance 0.1 10.0010 100ms 0.1 100 1,000 10 100 VDS - Volts 1,000 VDS - Volts Fig. 17. Maximum Transient Thermal Resistance 2.00 Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_1R6N50D2(2C)8-14-09