Preliminary Technical Information IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 Depletion Mode MOSFET VDSX ID(on) = > ≤ RDS(on) 500V 6A 500mΩ Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 300 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 TO-220AB (IXTP) G DS D (Tab) TO-247 (IXTH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 250μA 500 VGS(off) VDS = 25V, ID = 250μA - 2.0 IGSX VGS = ±20V, VDS = 0V IDSX(off) VDS = VDSX, VGS= - 5V RDS(on) VGS = 0V, ID = 3A, Note 1 ID(on) VGS = 0V, VDS = 25V, Note 1 - 4.0 • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification V Advantages V • Easy to Mount • Space Savings • High Power Density ±100 nA 5 μA 50 μA TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 500 mΩ 6 A Applications • • • • • • Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads DS100177A(12/09) IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 30V, ID = 3A, Note 1 2.8 Ciss Coss VGS = -10V, VDS = 25V, f = 1MHz 4.5 S 2800 pF 255 pF 64 pF 28 ns 72 ns 82 ns 43 ns 96 nC 11 nC 48 nC 0.50 0.21 0.41 °C/W °C/W °C/W Crss td(on) tr td(off) tf Resistive Switching Times VGS = ±5V, VDS = 250V, ID = 3A RG = 2.4Ω (External) Qg(on) Qgs VGS = 5V, VDS = 250V, ID = 3A Qgd RthJC RthCS TO-220 TO-247 TO-220 (IXTP) Outline Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Safe-Operating-Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 400V, ID = 0.45A, TC = 75°C, Tp = 5s 180 W TO-247 (IXTH) AD Outline Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VSD IF = 6A, VGS = -10V, Note 1 trr IRM QRM IF = 3A, -di/dt = 100A/μs VR = 100V, VGS = -10V Characteristic Values Min. Typ. Max. 0.8 350 16 2.8 Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-263 (IXTA) Outline Dim. 1. 2. 3. 4. Gate Drain Source Drain 1.3 Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 6.22 2.54 14.61 2.29 1.02 1.27 8.13 BSC 15.88 2.79 1.40 1.78 .270 .100 .575 .090 .040 .050 .320 BSC .625 .110 .055 .070 V ns A μC 1 = Gate 2 = Drain 3 = Source PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 40 6 VGS = 5V 3V 2V 1V 5 30 ID - Amperes 4 ID - Amperes VGS = 5V 4V 3V 35 0V 3 -1V 2 2V 25 20 1V 15 0V 10 1 -1V 5 -2V 0 -2V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 20 25 30 VDS - Volts VDS - Volts Fig. 4. Drain Current @ T J = 25ºC Fig. 3. Output Characteristics @ T J = 125ºC 6 1E+00 VGS = 5V 2V 1V 5 15 VGS = - 2.25V - 2.50V 1E-01 - 2.75V 0V 3 1E-02 ID - Amperes ID - Amperes 4 -1V 2 -2V 1 0 - 3.00V 1E-03 - 3.25V 1E-04 - 3.50V 1E-05 - 3.75V 1E-06 0 1 2 3 4 5 0 100 200 VDS - Volts 300 400 500 600 VDS - Volts Fig. 6. Dynamic Output Resistance vs. Gate Voltage Fig. 5. Drain Current @ T J = 100ºC 1.E+09 1.E+00 VGS = -2.50V ∆VDS = 350V - 100V 1.E+08 -2.75V 1.E-01 -3.00V R O - Ohms ID - Amperes 1.E+07 -3.25V 1.E-02 -3.50V 1.E-03 1.E-04 -3.75V 1.E+05 -4.00V 1.E+04 1.E-05 TJ = 25ºC 1.E+06 TJ = 100ºC 1.E+03 0 100 200 300 400 VDS - Volts © 2009 IXYS CORPORATION, All Rights Reserved 500 600 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 VGS - Volts -2.8 -2.6 -2.4 -2.2 -2.0 IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 Fig. 8. RDS(on) Normalized to ID = 3A Value vs. Drain Current Fig. 7. Normalized RDS(on) vs. Junction Temperature 2.6 4.0 VGS= 0V VGS = 0V 3.5 5V - - - - I D = 3A R DS(on) - Normalized R DS(on) - Normalized 2.2 1.8 1.4 1.0 3.0 2.5 TJ = 125ºC 2.0 1.5 TJ = 25ºC 1.0 0.6 0.5 0.2 0.0 -50 -25 0 25 50 75 100 125 150 0 2 4 6 8 TJ - Degrees Centigrade 12 14 16 18 20 16 18 20 Fig. 10. Transconductance Fig. 9. Input Admittance 20 12 VDS= 30V 18 VDS= 30V 10 16 g f s - Siemens 14 ID - Amperes 10 ID - Amperes 12 10 TJ = 125ºC 25ºC - 40ºC 8 6 4 8 TJ = - 40ºC 25ºC 125ºC 6 4 2 2 0 -3.5 0 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 0 2 4 6 8 VGS - Volts Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature 12 14 Fig. 12. Forward Voltage Drop of Intrinsic Diode 18 1.3 VGS= -10V 16 VGS(off) @ VDS = 25V 1.2 14 12 IS - Amperes BV / VGS(off) - Normalized 10 ID - Amperes 1.1 BVDSX @ VGS = - 5V 1.0 10 8 TJ = 125ºC 6 TJ = 25ºC 4 0.9 2 0 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.3 0.4 0.5 0.6 VSD - Volts 0.7 0.8 0.9 IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 Fig. 13. Capacitance Fig. 14. Gate Charge 5 10,000 VDS = 250V 4 I D = 3A 3 Capacitance - PicoFarads Ciss I G = 10mA 2 VGS - Volts 1,000 Coss 100 1 0 -1 -2 -3 Crss -4 f = 1 MHz -5 10 0 5 10 15 20 25 30 35 0 40 10 20 30 VDS - Volts 40 50 60 70 80 90 100 QG - NanoCoulombs Fig. 16. Forward-Bias Safe Operating Area Fig. 15. Forward-Bias Safe Operating Area @ T C = 75ºC @ T C = 25ºC 100.0 100.0 RDS(on) Limit RDS(on) Limit 25µs 100µs 10.0 ID - Amperes ID - Amperes 10.0 1ms 10ms 1.0 100µs 1ms 1.0 10ms 100ms DC TJ = 150ºC 100ms TJ = 150ºC DC TC = 75ºC Single Pulse TC = 25ºC Single Pulse 0.1 0.1 10 100 10 1,000 100 VDS - Volts 1,000 VDS - Volts Fig. 17. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_6N50D2(6C)8-13-09