Preliminary Technical Information IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 Depletion Mode MOSFET VDSX ID(on) RDS(on) N-Channel = > ≤ 500V 800mA 4.6Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 60 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 0.35 2.50 3.00 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 25μA 500 VGS(off) VDS = 25V, ID = 25μA - 2.0 IGSX VGS = ±20V, VDS = 0V IDSX(off) VDS = VDSX, VGS= - 5V RDS(on) VGS = 0V, ID = 400mA, Note 1 ID(on) VGS = 0V, VDS = 25V, Note 1 - 4.0 V Advantages V • Easy to Mount • Space Savings • High Power Density ±50 nA 1 μA 10 μA TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 4.6 800 Ω mA Applications • • • • • • Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads DS100178A(8/09) IXTY08N50D2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 340 VDS = 30V, ID = 400mA, Note 1 Ciss mS 312 pF 35 pF 11 pF 28 ns 54 ns 35 ns 52 ns 12.7 nC 1.2 nC 7.3 0.50 Crss td(on) Resistive Switching Times tr VGS = ±5V, VDS = 250V, ID = 400mA td(off) RG = 10Ω (External) tf Qg(on) Qgs VGS = 5V, VDS = 250V, ID = 400mA Qgd RthJC RthCS TO-220 TO-252 AA (IXTY) Outline 570 VGS = -10V, VDS = 25V, f = 1MHz Coss SOA VDS = 400V, ID = 90mA, TC = 75°C, Tp = 5s Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Inches Min. Max. nC A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 2.08 °C/W °C/W A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 36 W Characteristic Values Min. Typ. Max. VSD IF = 800mA, VGS = -10V, Note 1 trr IRM QRM IF = 800mA, -di/dt = 100A/μs VR = 100V, VGS = -10V 0.8 Gate Drain Source Drain Bottom Side Millimeter Min. Max. Characteristic Values Min. Typ. Max. Test Conditions 1. 2. 3. 4. Dim. Safe-Operating-Area Specification Symbol IXTA08N50D2 IXTP08N50D2 1.3 400 5.2 1.04 V e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC TO-220 (IXTP) Outline ns A μC Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-263 (IXTA) Outline 1. 2. 3. 4. Gate Drain Source Drain Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 6.22 2.54 14.61 2.29 1.02 1.27 8.13 BSC 15.88 2.79 1.40 1.78 .270 .100 .575 .090 .040 .050 .320 BSC .625 .110 .055 .070 Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 Fig. 2. Extended Output Characteristics Fig. 1. Output Characteristics @ T J = 25ºC VGS = 5V 3V 2V 1V 0.7 0.6 VGS = 5V 3V 4.0 3.5 2V 3.0 ID - Amperes 0.5 ID - Amperes @ T J = 25ºC 4.5 0.8 0V 0.4 0.3 2.5 1V 2.0 0V 1.5 -1V 0.2 1.0 0.1 -1V -2V 0.5 0.0 -2V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 20 25 Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. Drain Current @ T J = 25ºC 0.8 1E+00 VGS = 5V 2V 1V VGS = - 2.50V 1E-01 - 2.25V 0.6 0V 0.4 - 3.00V 1E-02 0.5 ID - Amperes ID - Amperes 30 VDS - Volts VDS - Volts 0.7 15 -1V 0.3 - 3.25V - 3.50V 1E-03 - 3.75V 1E-04 0.2 -2V - 4.00V 1E-05 0.1 -3V 0.0 1E-06 0 1 2 3 4 5 6 0 100 200 VDS - Volts 300 400 500 600 VDS - Volts Fig. 6. Dynamic Resistance vs. Gate Voltage Fig. 5. Drain Current @ T J = 100ºC 1.E+08 1.E+00 ∆VDS = 350V - 100V VGS = -2.75V 1.E+07 -3.00V R O - Ohms ID - Amperes 1.E-01 -3.25V 1.E-02 -3.50V -3.75V 1.E-03 1.E+06 TJ = 25ºC TJ = 100ºC 1.E+05 -4.00V 1.E-04 0 100 200 300 400 VDS - Volts © 2009 IXYS CORPORATION, All Rights Reserved 500 600 1.E+04 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 VGS - Volts -3.0 -2.8 -2.6 -2.4 IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 Fig. 8. RDS(on) Normalized to ID = 0.4A Value vs. Drain Current Fig. 7. Normalized RDS(on) vs. Junction Temperature 2.6 3.0 VGS = 0V VGS = 0V 5V - - - - I D = 0.4A 2.5 R DS(on) - Normalized R DS(on) - Normalized 2.2 1.8 1.4 1.0 2.0 TJ = 125ºC 1.5 1.0 0.6 TJ = 25ºC 0.2 0.5 -50 -25 0 25 50 75 100 125 150 0.0 0.4 0.8 TJ - Degrees Centigrade 1.2 1.6 2.0 2.4 ID - Amperes Fig. 10. Transconductance Fig. 9. Input Admittance 3.0 1.8 VDS = 30V TJ = - 40ºC VDS = 30V 1.6 2.5 1.4 g f s - Siemens ID - Amperes 2.0 1.5 TJ = 125ºC 25ºC - 40ºC 1.0 25ºC 1.2 125ºC 1.0 0.8 0.6 0.4 0.5 0.2 0.0 -3.5 0.0 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 0.0 0.5 1.0 VGS - Volts Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature 2.0 2.5 3.0 Fig. 12. Forward Voltage Drop of Intrinsic Diode 3.2 1.3 VGS = -10V 2.8 1.2 VGS(off) @ VDS = 25V 2.4 IS - Amperes BV / VGS(off) - Normalized 1.5 ID - Amperes 1.1 BVDSX @ VGS = - 5V 1.0 2.0 1.6 1.2 TJ = 125ºC TJ = 25ºC 0.8 0.9 0.4 0.0 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.3 0.4 0.5 0.6 VSD - Volts 0.7 0.8 0.9 IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 Fig. 13. Capacitance Fig. 14. Gate Charge 5 1,000 Capacitance - PicoFarads Ciss 4 VDS = 250V 3 I G = 1mA I D = 400mA 2 VGS - Volts 100 Coss 10 1 0 -1 -2 Crss -3 -4 f = 1 MHz -5 1 0 5 10 15 20 25 30 35 0 40 2 4 6 8 10 12 VDS - Volts QG - NanoCoulombs Fig. 15. Forward-Bias Safe Operating Area Fig. 16. Forward-Bias Safe Operating Area 14 @ T C = 75ºC @ T C = 25ºC 10.00 10.00 RDS(on) Limit RDS(on) Limit 25µs 25µs 100µs ID - Amperes 1.00 ID - Amperes 1.00 1ms 10ms 100ms 0.10 DC 100µs 1ms 10ms 100ms 0.10 DC TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 75ºC Single Pulse 0.01 0.01 10 100 1,000 10 100 VDS - Volts 1,000 VDS - Volts Fig. 17. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 10.0 1.0 0.1 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_08N50D2(1C)8-14-09