Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION ・・With TO-220 package APPLICATIONS ・For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2N6098 Collector-base voltage 70 Open emitter VEBO V 2N6100 80 2N6101 80 2N6098 70 2N6099 VCEO Collector-emitter voltage 70 Open base V 2N6100 80 2N6101 80 Emitter-base voltage UNIT 70 2N6099 VCBO VALUE Open collector 8 V 10 A 75 W IC Collector current PT Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.67 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6098 Collector-emitter sustioning voltage TYP. MAX UNIT 70 2N6099 VCEO(SUS) MIN 70 IC=0.1A ;IB=0 V 2N6100 80 2N6101 80 VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=0.5A 1.3 V VCEsat-2 Collector-emitter saturation voltage IC=10A;IB=2.5A 3.5 V 1.3 V VBE 2N6098/6099 IC=4A ; VCE=4V 2N6100/6101 IC=5A ; VCE=4V Base-emitter on voltage ICBO Collector cut-off current VCB=Rated VCBO;IE=0 TC=150℃ 0.5 2.0 mA IEBO Emitter cut-off current VEB=8V; IC=0 1.0 mA hFE DC current gain 2N6098/6099 20 2N6100/6101 fT Transition frequency IC=4A ; VCE=4V 80 IC=5A ; VCE=4V IC=1A ; VCE=10V JMnic 0.8 MHz Product Specification Silicon NPN Power Transistors www.jmnic.com 2N6098 2N6099 2N6100 2N6101 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) JMnic