JMNIC 2N5632

Product Specification
www.jmnic.com
2N5632 2N5633 2N5634
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Low collector-emitter saturation voltage
APPLICATIONS
・For general-purpose power amplifier
and switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N5632
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N5633
Open emitter
120
2N5634
140
2N5632
100
2N5633
Emitter-base voltage
UNIT
100
Open base
2N5634
VEBO
VALUE
120
V
V
140
Open collector
7
V
10
A
150
W
IC
Collector current
PD
Total Power Dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.1
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
JMnic
Product Specification
www.jmnic.com
2N5632 2N5633 2N5634
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N5632
VCEO(sus)
Collector-emitter
sustaining voltage
2N5633
MIN
TYP.
MAX
UNIT
100
IC=0.2A ;IB=0
2N5634
V
120
140
VCEsat-1
Collector-emitter saturation voltage
IC=7A; IB=0.7A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A ;IB=2A
3.0
V
VBEsat
Collector-emitter saturation voltage
IC=10A ;IB=2A
2.5
V
Base-emitter on voltage
IC=5A ; VCE=5V
1.5
V
1.0
mA
VBE
ICEO
ICEV
IEBO
Collector cut-off current
2N5632
VCE=50V; IB=0
2N5633
VCE=60V; IB=0
2N5634
VCE=70V; IB=0
Collector cut-off current
(VBE(off)=1.5V)
VCE=ratedVCB
1.0
VCE=ratedVCB; TC=150℃
5.0
VEB=7V; IC=0
1.0
mA
Emitter cut-off current
2N5632
hFE
DC current gain
2N5633
IC=5A ; VCE=5V
2N5634
fT
Transition frequency
IC=1A ; VCE=20V
JMnic
25
100
20
80
15
60
1.0
mA
MHz
Product Specification
www.jmnic.com
2N5632 2N5633 2N5634
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
JMnic