JMnic Product Specification 2N6326 2N6327 2N6328 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N6326 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6327 Open emitter 80 2N6328 100 2N6326 60 2N6327 Emitter-base voltage UNIT 60 Open base 2N6328 VEBO VALUE 80 V V 100 Open collector 5 V IC Collector current 30 A IB Base current 7.5 A PD Total power dissipation 200 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification 2N6326 2N6327 2N6328 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6326 VCEO(SUS) Collector-emitter sustaining voltage 2N6327 MIN TYP. MAX UNIT 60 IC=0.2 A ;IB=0 V 80 100 2N6328 VCEsat Collector-emitter saturation voltage IC=15A; IB=1.5A 1.2 V VBEsat Base-emitter saturation voltage IC=15A; IB=1.5A 1.5 V Base-emitter on voltage IC=8A ; VCE=4V 1.5 V 2N6326 VCB=60V; IE=0 TC=150℃ 1.0 5.0 2N6327 VCB=80V; IE=0 TC=150℃ 1.0 5.0 2N6328 VCB=100V; IE=0 TC=150℃ 1.0 5.0 1.0 VBE ICBO Collector cut-off current IEBO Emitter cut-off current VEB=4V; IC=0 hFE-1 DC current gain IC=8A ; VCE=4V 25 hFE-2 DC current gain IC=30A ; VCE=4V 6 Transition frequency IC=1A ; VCE=10V;f=1.0MHz 3 fT 2 mA mA 30 MHz JMnic Product Specification 2N6326 2N6327 2N6328 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3