JMNIC 2N6328

JMnic
Product Specification
2N6326 2N6327 2N6328
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Low collector saturation voltage
・High DC current gain
APPLICATIONS
・Designed for audio amplifier and
switching circuits applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N6326
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N6327
Open emitter
80
2N6328
100
2N6326
60
2N6327
Emitter-base voltage
UNIT
60
Open base
2N6328
VEBO
VALUE
80
V
V
100
Open collector
5
V
IC
Collector current
30
A
IB
Base current
7.5
A
PD
Total power dissipation
200
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
0.875
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
JMnic
Product Specification
2N6326 2N6327 2N6328
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6326
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6327
MIN
TYP.
MAX
UNIT
60
IC=0.2 A ;IB=0
V
80
100
2N6328
VCEsat
Collector-emitter saturation voltage
IC=15A; IB=1.5A
1.2
V
VBEsat
Base-emitter saturation voltage
IC=15A; IB=1.5A
1.5
V
Base-emitter on voltage
IC=8A ; VCE=4V
1.5
V
2N6326
VCB=60V; IE=0
TC=150℃
1.0
5.0
2N6327
VCB=80V; IE=0
TC=150℃
1.0
5.0
2N6328
VCB=100V; IE=0
TC=150℃
1.0
5.0
1.0
VBE
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=8A ; VCE=4V
25
hFE-2
DC current gain
IC=30A ; VCE=4V
6
Transition frequency
IC=1A ; VCE=10V;f=1.0MHz
3
fT
2
mA
mA
30
MHz
JMnic
Product Specification
2N6326 2N6327 2N6328
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3