JMNIC 2N6258

Product Specification
www.jmnic.com
2N6258
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Low collector-emitter saturation voltage
APPLICATIONS
・Designed for audio amplifier and
switching circuits applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
30
A
IB
Base current
7.5
A
PD
Total Power Dissipation
250
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
0.875
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
JMnic
Product Specification
www.jmnic.com
2N6258
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
VCEsat
Collector-emitter saturation voltge
IC=7.5A ;IB=0.75A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=7.5A ;IB=0.75A
1.3
V
ICEO
Collector cut-off current
VCE=40V; IB=0
1.0
mA
ICEV
Collector cut-off current
VCE=100V; VBE(off)=1.5V
TC=150℃
0.1
5.0
mA
ICBO
Emitter cut-off current
VCB=100V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=15A ; VCE=2V
20
Transition frequency
IC=1A;VCE=10V
0.8
fT
JMnic
80
UNIT
V
MHz
Product Specification
www.jmnic.com
2N6258
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3